2026-09-11

【學術亮點】協同熱結晶作用可實現無反溶劑和無電洞傳輸層的錫鉛鈣鈦礦太陽能電池的界面均質化

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【學術亮點】協同熱結晶作用可實現無反溶劑和無電洞傳輸層的錫鉛鈣鈦礦太陽能電池的界面均質化
Agentic AI: Driven Intelligent, High-Efficiency Off-Grid Greenhouse Platform
Department of Chemical Engineering / Chieh-Ting Lin / Associate Professor
智慧溫室:行動AI驅動之智慧高效離網溫室平台【化工系林玠廷 副教授】
論文篇名 英文:Cooperative thermal crystallization enables interfacial homogenization in antisolvent- and HTL-free Sn-Pb perovskite solar cells
中文:協同熱結晶作用可實現無反溶劑和無電洞傳輸層的錫鉛鈣鈦礦太陽能電池的界面均質化
期刊名稱 Materials Science and Engineering: R: Reports
發表年份, 卷數, 起迄頁數 2026, 171, no. 101283
作者 Yun-Shan Li, Wen-Xian Zhu, Xin Chen, Yueyao Dong, Huan-Wei Lin, Yi-Sheng Lin, Yun-Sheng Shih, Chi-Jing Huang, Wei-Jia Qiu, Chang-Hao Wang, Chih-Chan Tsai, Luis Lanzetta, Matyas Daboczi, Caterina Ducati, Eric Wei-Guang Diau, Thomas J Macdonald, Chieh-Ting Lin (林玠廷)*
DOI 10.1016/j.mser.2026.101283
中文摘要 窄能隙錫鉛鈣鈦礦太陽能電池(Sn–Pb PSCs)是實現全鈣鈦礦疊層太陽能電池的重要候選材料,然而其發展仍受到結晶控制困難、埋藏界面缺陷以及界面復合等問題限制,尤其在無電洞傳輸層(HTL-free)與無反溶劑製程中更具挑戰性。本研究提出一種胍基硫氰酸鹽(GuaSCN)輔助真空結晶淬熄(vacuum-assisted crystallization quenching, VACQ)策略,以實現高效率且簡化結構之無 HTL、無反溶劑錫鉛鈣鈦礦太陽能電池。
透過原位光致發光(in-situ PL)分析,研究揭示 GuaSCN 中的 SCN⁻ 與 Gua⁺ 在薄膜形成過程中具有互補作用:SCN⁻ 可調控早期晶體成長,而 Gua⁺ 則促進後續晶體結構鬆弛與缺陷修復。此協同調控機制可形成更加緻密且均勻的 Sn–Pb 鈣鈦礦薄膜,降低局部成分波動與結構異質性,並改善埋藏界面連續性。結合 GIWAXS、STEM-EDS、QFLS 及光電特性分析,證實 GuaSCN 能有效降低非輻射復合損失,提高能量均勻性與載子傳輸效率。
最終,經 GuaSCN 調控之無 HTL、無反溶劑 Sn–Pb 鈣鈦礦太陽能電池達到最高 21.4% 功率轉換效率(PCE),並具有超過 80% 的填充因子(FF)。此外,該窄能隙子電池亦成功整合至單接面全鈣鈦礦疊層元件中,展現其於簡化製程與高效率疊層光伏應用上的潛力。本研究建立了一套以添加劑引導結晶與埋藏界面均勻化為核心的策略,為高性能低能隙錫鉛鈣鈦礦光伏元件之開發提供新的方向。
英文摘要 Low-bandgap Sn-Pb perovskite solar cells are indispensable building blocks for all-perovskite tandems, yet their development is constrained by challenging crystallization control, severe interfacial recombination, and reliance on costly hole transport layers (HTLs) and antisolvent processing involving hazardous and volatile organic solvents. Here, a GuaSCN-assisted vacuum crystallization strategy is developed to realize efficient HTL-free and antisolvent-free Sn-Pb perovskite solar cells. The in-situ photoluminescence evolution is consistent with a cooperative crystallization process, where SCN- regulates early-stage growth while Gua+ facilitates later-stage structural relaxation, enabling sustained optoelectronic improvement during film formation. This synergistic regulation yields compact Sn-Pb perovskite films with a uniform buried interface, reduced structural and compositional heterogeneity, and a surface-associated residual region that may contribute to interfacial passivation. Cross-sectional chemical mapping further shows reduced local compositional fluctuations and interfacial irregularity within the analysed regions. These structural characteristics are accompanied by increased quasi-Fermi level splitting, reduced energetic disorder, and a higher attainable photovoltage of the neat perovskite film. Consequently, HTL-free devices deliver a champion efficiency of 21.4% with a fill factor exceeding 80%, among the highest values reported for HTL-free, antisolvent-free Sn-Pb perovskite solar cells. Furthermore, the GuaSCN-treated narrow-bandgap subcell is integrated into a monolithic all-perovskite tandem device, demonstrating its promise for simplified tandem photovoltaics.
發表成果與AI計畫研究主題相關性 窄能隙錫鉛鈣鈦礦太陽能電池(Sn–Pb PSCs)是實現全鈣鈦礦疊層太陽能電池的重要候選材料,然而其發展仍受到結晶控制困難、埋藏界面缺陷以及界面復合等問題限制,尤其在無電洞傳輸層(HTL-free)與無反溶劑製程中更具挑戰性。本研究提出一種胍基硫氰酸鹽(GuaSCN)輔助真空結晶淬熄(vacuum-assisted crystallization quenching, VACQ)策略,以實現高效率且簡化結構之無 HTL、無反溶劑錫鉛鈣鈦礦太陽能電池。
透過原位光致發光(in-situ PL)分析,研究揭示 GuaSCN 中的 SCN⁻ 與 Gua⁺ 在薄膜形成過程中具有互補作用:SCN⁻ 可調控早期晶體成長,而 Gua⁺ 則促進後續晶體結構鬆弛與缺陷修復。此協同調控機制可形成更加緻密且均勻的 Sn–Pb 鈣鈦礦薄膜,降低局部成分波動與結構異質性,並改善埋藏界面連續性。結合 GIWAXS、STEM-EDS、QFLS 及光電特性分析,證實 GuaSCN 能有效降低非輻射復合損失,提高能量均勻性與載子傳輸效率。
最終,經 GuaSCN 調控之無 HTL、無反溶劑 Sn–Pb 鈣鈦礦太陽能電池達到最高 21.4% 功率轉換效率(PCE),並具有超過 80% 的填充因子(FF)。此外,該窄能隙子電池亦成功整合至單接面全鈣鈦礦疊層元件中,展現其於簡化製程與高效率疊層光伏應用上的潛力。本研究建立了一套以添加劑引導結晶與埋藏界面均勻化為核心的策略,為高性能低能隙錫鉛鈣鈦礦光伏元件之開發提供新的方向。
上架日期2026-08-31
 
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